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FSD210B Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FSD210B Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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FSD210B, FSD200B 5 Electrical Characteristics (Ta = 25 °C unless otherwise specified) Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameter is derived from characterization Parameter Symbol Condition Min. Typ. Max. Unit SENSE FET SECTION Zero-Gate-Voltage Drain Current IDSS VDS=560V, VGS=0V - - 100 µA Drain-Source On-State Resistance RDS(ON) Tj=25 °C, ID=25mA - 28 32 Ω Tj=100 °C, ID=25mA - 42 48 Rise Time tr VDS=325V, ID=50mA - 100 - ns Fall Time tf VDS=325V, ID=25mA - 50 - ns CONTROL SECTION Switching Frequency fOSC Tj=25 °C 126 134 142 KHz Switching Frequency Modulation Range ∆fMOD Tj=25 °C- ±4 - KHz Maximum Duty Cycle DMAX VFB=3.5V 60 66 72 % Minimum Duty Cycle DMIN VFB=GND 0 0 0 % UVLO Threshold Voltage (FSD200B) VSTART 6.3 7 7.7 V VSTOP After turn on 5.3 6 6.7 V UVLO Threshold Voltage (FSD210B) VSTART 8.0 8.7 9.4 V VSTOP After turn on 6.0 6.7 7.4 V Feedback Source Current IFB VFB=GND 0.22 0.25 0.28 mA Internal Soft Start Time tS/S - 3 - ms BURST MODE SECTION Burst Mode Voltage VBURH Tj=25 °C 0.58 0.64 0.7 V VBURL 0.5 0.58 0.64 V VBUR(HYS) Hysteresis - 60 - mV PROTECTION SECTION Peak Current Limit ILIM ∆i/∆t=150mA/us 0.275 0.320 0.365 A Current Limit Delay Time(1) tCLD Tj=25 °C - 220 - ns Thermal Shutdown Temperature(1) TSD 125 145 160 °C Shutdown Feedback Voltage VSD 4.0 4.5 5.0 V Leading Edge Blanking Time(2) tLEB 200 - - ns Shutdown Delay Current IDELAY VFB=4.0V 3 5 7 µA TOTAL DEVICE SECTION Operating Supply Current (FSD200B) IOP (control part only) ,VCC=7V - 600 - µA Start-Up Charging Current (FSD200B) ICH VCC=0V - 1 1.2 mA Operating Supply Current (FSD210B) IOP (control part only) ,VCC=11V - 700 - µA Start-Up Charging Current (FSD210B) ICH VCC=0V - 700 900 µA Vstr Supply Voltage VSTR VCC=0V 20 - - V Vcc Regulation Voltage (FSD200B) VCCREG -7 - V |
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