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FSCM0565R Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FSCM0565R Datasheet(HTML) 4 Page - Fairchild Semiconductor |
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FSCM0565R 4 Absolute Maximum Ratings (Ta=25 °C, unless otherwise specified) Notes: 1. Tj = 25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 30mH, VDD = 50V, RG = 25 Ω, starting Tj = 25°C 4. L = 13uH, starting Tj = 25 °C Parameter Symbol Value Unit Drain-Source (GND) Voltage (1) VDSS 650 V Drain-Gate Voltage (RGS=1M Ω)VDGR 650 V Gate-Source (GND) Voltage VGS ±30 V Drain Current Pulsed (2) IDM 20 ADC Continuous Drain Current (TO-220) @ Tc = 25°C @ TC=100 °C ID 5ADC ID 3.2 ADC Continuous Drain Current (D2-PAK) @ Tc = 25°C @ TC=100 °C ID 2.9 ADC ID 1.9 ADC Supply Voltage VCC 20 V Analog Input Voltage Range VFB -0.3 to VCC V Total Power Dissipation (D2-PAK) PD 75 W Derating 0.6 W/ °C Total Power Dissipation (TO-220) PD 120 W Derating 0.96 W/ °C Operating Junction Temperature TJ Internally limited °C Operating Ambient Temperature TA -25 to +85 °C Storage Temperature Range TSTG -55 to +150 °C ESD Capability, HBM Model (All pins excepts for Vstr and Vfb) - 2.0 (Vcc-Vfb=1.0kV) kV ESD Capability, Machine Model (All pins excepts for Vstr and Vfb) - 300 (Vcc-Vfb=100V) V |
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