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4420 Datasheet(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Part No. 4420
Description  N-Channel 30-V (D-S) MOSFET
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

4420 Datasheet(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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N-Channel 30-V (D-S) MOSFET
FEATURES
Halogen-free
TrenchFET® Power MOSFET
Optimized for High-Side Synchronous
Rectifier Operation
100 % Rg Tested
100 % UIS Tested
APPLICATIONS
Notebook CPU Core
- High-Side Switch
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
a
Qg (Typ.)
30
0.0
08 at VGS= 10 V
13
6.
1 nC
0.01
1 at VGS = 4.5 V
11
SO-8
SD
SD
SD
GD
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
G
D
S
Notes:
a. Base on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
1
3
A
TC = 70 °C
TA = 25 °C
9b, c
TA = 70 °C
7b, c
Pulsed Drain Current
IDM
45
Continuous Source-Drain Diode Current
TC = 25 °C
IS
3.
7
TA = 25 °C
2.
0b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
2
0
Avalanche Energy
EAS
2
1
mJ
Maximum Power Dissipation
TC = 25 °C
PD
4.
1
W
TC = 70 °C
2.
5
TA = 25 °C
2.
2b, c
TA = 70 °C
1.
3b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
t
≤ 10 s
RthJA
3
9
5
5
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
2
5
2
9
1
0
1
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
4420


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