4420 datasheet(1/9 Pages) VBSEMI | N-Channel 30-V (D-S) MOSFET

Part #	4420

Description	N-Channel 30-V (D-S) MOSFET

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Manufacturer	VBSEMI [VBsemi Electronics Co.,Ltd]

Direct Link	www.VBsemi.com

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N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free

• TrenchFET® Power MOSFET

•

Optimized for High-Side Synchronous

Rectifier Operation

•

100 % Rg Tested

•

100 % UIS Tested

APPLICATIONS

•

Notebook CPU Core

- High-Side Switch

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

30

0.0

08 at VGS= 10 V

13

6.

1 nC

0.01

1 at VGS = 4.5 V

11

SO-8

SD

GD

5

6

7

8

Top View

2

3

4

1

N-Channel MOSFET

G

D

S

Notes:

a. Base on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

1

3

A

TC = 70 °C

TA = 25 °C

9b, c

TA = 70 °C

7b, c

Pulsed Drain Current

IDM

45

Continuous Source-Drain Diode Current

TC = 25 °C

IS

3.

7

TA = 25 °C

2.

0b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

2

0

Avalanche Energy

EAS

2

1

mJ

Maximum Power Dissipation

TC = 25 °C

PD

4.

1

W

TC = 70 °C

2.

5

TA = 25 °C

2.

2b, c

TA = 70 °C

1.

3b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

3

9

5

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

2

5

2

9

1

0

1

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

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