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FQH35N40 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FQH35N40 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  2 www.fairchildsemi.com FQH35N40 Rev. A Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2.3mH, IAS = 35A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 35A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FQH35N40 FQH35N40 TO-247 - - 30 Symbol Parameter Conditions Min. Typ. Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 400 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C-- 0.42 -- V/ °C IDSS Zero Gate Voltage Drain Current VDS = 400V, VGS = 0V VDS = 320V, TC = 125°C -- -- -- -- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 17.5A -- 0.08 0.105 Ω gFS Forward Transconductance VDS = 50V, ID = 17.5A (Note 4) -- 35 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 4300 5600 pF Coss Output Capacitance -- 730 950 pF Crss Reverse Transfer Capacitance -- 65 85 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 200V, ID = 35A RG = 25Ω (Note 4, 5) -- 95 200 ns tr Turn-On Rise Time -- 360 730 ns td(off) Turn-Off Delay Time -- 220 450 ns tf Turn-Off Fall Time -- 190 390 ns Qg Total Gate Charge VDS = 320V, ID = 35A VGS = 10V (Note 4, 5) -- 110 140 nC Qgs Gate-Source Charge -- 27 -- nC Qgd Gate-Drain Charge -- 53 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 35 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 140 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 35A -- -- 1.5 V trr Reverse Recovery Time VGS = 0V, IS = 35A dIF/dt =100A/µs (Note 4) -- 390 -- ns Qrr Reverse Recovery Charge -- 4.5 -- µC |
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