FQH35N40 datasheet(3/8 Pages) FAIRCHILD

Part #	FQH35N40

Description	400V N-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FQH35N40 Rev. A

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

-1

10

0

10

1

10

0

10

1

10

2

* Notes :

1. 250µs Pulse Test

2. T

C = 25°C

V

GS

Top :

15 V

10 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom :

5.5 V

V

DS , Drain-Source Voltage [V]

246

8

10

-1

10

0

10

1

10

2

* Notes :

1. V

DS = 50V

2. 250µs Pulse Test

-55°C

150°C

25°C

V

GS , Gate-Source Voltage [V]

0

20

40

60

80

100

120

140

160

180

0.0

0.1

0.2

0.3

0.4

* Note : T

J = 25°C

V

GS = 20V

V

GS = 10V

I

D , Drain Current [A]

0.4

0.8

1.2

1.6

2.0

10

-1

10

0

10

1

10

2

25?

150?

* Notes :

1. V

GS = 0V

2. 250µs Pulse Test

V

SD , Source-Drain Voltage [V]

10

-1

10

0

10

1

0

1500

3000

4500

6000

7500

9000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

* Notes ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0

20406080

100

120

0

2

4

6

8

10

12

V

DS = 200V

V

DS = 80V

V

DS = 320V

* Note : I

D = 35 A

Q

G, Total Gate Charge [nC]

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