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TLV767-Q1 Datasheet(PDF) 16 Page - Texas Instruments |
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TLV767-Q1 Datasheet(HTML) 16 Page - Texas Instruments |
16 / 28 page 16 TLV767-Q1 SBVS381 – APRIL 2020 www.ti.com Product Folder Links: TLV767-Q1 Submit Documentation Feedback Copyright © 2020, Texas Instruments Incorporated Feature Description (continued) The output pulldown current for this device is 1.2 mA typical, as listed in the Electrical Characteristics table of the Specifications section. Do not rely on the output pulldown circuit for discharging a large amount of output capacitance after the input supply has collapsed because reverse current can flow from the output to the input. This reverse current flow can cause damage to the device. See the Reverse Current section for more details. 7.3.6 Thermal Shutdown The device contains a thermal shutdown protection circuit to disable the device when the junction temperature (TJ) of the pass transistor rises to TSD(shutdown) (typical). Thermal shutdown hysteresis assures that the device resets (turns on) when the temperature falls to TSD(reset) (typical). The thermal time-constant of the semiconductor die is fairly short, thus the device may cycle on and off when thermal shutdown is reached until power dissipation is reduced. Power dissipation during startup can be high from large VIN – VOUT voltage drops across the device or from high inrush currents charging large output capacitors. Under some conditions, the thermal shutdown protection disables the device before startup completes. For reliable operation, limit the junction temperature to the maximum listed in the Recommended Operating Conditions table. Operation above this maximum temperature causes the device to exceed its operational specifications. Although the internal protection circuitry of the device is designed to protect against thermal overall conditions, this circuitry is not intended to replace proper heat sinking. Continuously running the device into thermal shutdown or above the maximum recommended junction temperature reduces long-term reliability. 7.4 Device Functional Modes 7.4.1 Device Functional Mode Comparison The Device Functional Mode Comparison table shows the conditions that lead to the different modes of operation. See the Electrical Characteristics table for parameter values. Table 1. Device Functional Mode Comparison OPERATING MODE PARAMETER VIN VEN IOUT TJ Normal operation VIN > VOUT(nom) + VDO and VIN > VIN(min) VEN > VEN(HI) IOUT < IOUT(max) TJ < TSD(shutdown) Dropout operation VIN(min) < VIN < VOUT(nom) + VDO VEN > VEN(HI) IOUT < IOUT(max) TJ < TSD(shutdown) Disabled (any true condition disables the device) VIN < VUVLO VEN < VEN(LOW) Not applicable TJ > TSD(shutdown) 7.4.2 Normal Operation The device regulates to the nominal output voltage when the following conditions are met: • The input voltage is greater than the nominal output voltage plus the dropout voltage (VOUT(nom) + VDO) • The output current is less than the current limit (IOUT < ICL) • The device junction temperature is less than the thermal shutdown temperature (TJ < TSD) • The enable voltage has previously exceeded the enable rising threshold voltage and has not yet decreased to less than the enable falling threshold 7.4.3 Dropout Operation If the input voltage is lower than the nominal output voltage plus the specified dropout voltage, but all other conditions are met for normal operation, the device operates in dropout mode. In this mode, the output voltage tracks the input voltage. During this mode, the transient performance of the device becomes significantly degraded because the pass transistor is in the ohmic or triode region, and acts as a switch. Line or load transients in dropout can result in large output-voltage deviations. |
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