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2SK3569 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SK3569
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3569 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SK3569
2004-03-04
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
µA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 µA, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 600 V, VGS = 0 V
100
µA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
0.54
0.75
Forward transfer admittance
Yfs
VDS = 10 V, ID = 5 A
0.7
8.5
S
Input capacitance
Ciss
1500
Reverse transfer capacitance
Crss
15
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
180
pF
Rise time
tr
22
Turn-on time
ton
50
Fall time
tf
36
Switching time
Turn-off time
toff
180
ns
Total gate charge
Qg
42
Gate-source charge
Qgs
23
Gate-drain charge
Qgd
VDD ∼− 400 V, VGS = 10 V, ID = 10 A
19
nC
Source-Drain Ratings and Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
10
A
Pulse drain reverse current
(Note 1)
IDRP
40
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
1300
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/µs
16
µC
Marking
RL =
40
0 V
10 V
VGS
VDD ∼− 200 V
ID = 5 A
VOUT
50
Duty <= 1%, tw = 10 µs
※ Lot Number
TYPE
K3569


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