ADG839 datasheet(3/16 Pages) AD

Part #	ADG839

Description	0.35 ohm CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUX

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ADG839

Rev. 0 | Page 3 of 16

SPECIFICATIONS1—2.7 V TO 3.6 V

VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.

Table 2.

−40°C to

Parameter

+25°C

+85°C

+125°C

Unit

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

0 V to VDD

V

VDD = 2.7 V

On Resistance (RON)

0.35

Ω typ

VDD = 2.7 V, VS = 0 V to VDD, IS = 100 mA;

0.5

0.56

0.61

Ω max

Figure 19

On Resistance Match between

0.04

Ω typ

VDD = 2.7 V, VS = 0.9 V, IS = 100 mA

Channels (∆RON)

0.075

0.085

0.095

Ω max

On Resistance Flatness

0.055

Ω typ

VDD = 2.7 V, VS = 0 V to VDD,

(RFLAT (ON))

0.07

0.082

0.09

Ω max

IS = 100 mA

LEAKAGE CURRENTS

VDD = 3.6 V

Source Off Leakage IS (OFF)

±0.2

nA typ

VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V; Figure 20

Channel On Leakage ID, IS (ON)

±0.2

nA typ

VS = VD = 0.6 V or 3.3 V; Figure 21

DIGITAL INPUTS

Input High Voltage, VINH

2

V min

Input Low Voltage, VINL

0.8

V max

Input Current

IINL or IINH

0.005

µA typ

VIN = VINL or VINH

±0.1

µA max

CIN, Digital Input Capacitance

3.2

pF typ

DYNAMIC CHARACTERISTICS2

tON

12

ns typ

RL = 50 Ω, CL = 35 pF

16

18

19

ns max

VS = 1.5 V/0 V; Figure 22

tOFF

6.5

ns typ

RL = 50 Ω, CL = 35 pF

8.5

9

9.5

ns max

VS = 1.5 V; Figure 22

Break-Before-Make Time Delay

5

ns typ

RL = 50 Ω, CL = 35 pF; Figure 23

(tBBM)

1

ns min

VS1 = VS2 = 1.5 V;

Charge Injection

70

pC typ

VS = 1.5 V, RS = 0 Ω, CL = 1 nF; Figure 24

Off Isolation

−57

dB typ

RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25

Channel-to-Channel Crosstalk

−57

dB typ

S1 −S2;

RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 26

Total Harmonic Distortion

(THD + N)

0.013

%

RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 3 V p-p

Insertion Loss

−0.01

dB typ

RL = 50 Ω, CL = 5 pF; Figure 27

−3 dB Bandwidth

25

MHz typ

RL = 50 Ω, CL = 5 pF; Figure 27

CS (OFF)

74

pF typ

CD, CS (ON)

120

pF typ

VDD = 3.6 V

POWER REQUIREMENTS

Digital inputs = 0 V or 3.6 V

IDD

0.003

µA typ

1

4

µA max

1 Temperature range for the Y version is −40°C to +125°C.

2 Guaranteed by design; not subject to production test.

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