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MC74LCX00DT Datasheet(PDF) 3 Page - ON Semiconductor

Part No. MC74LCX00DT
Description  LOW-VOLTAGE CMOS QUAD 2-INPUT NAND GATE
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MC74LCX00DT Datasheet(HTML) 3 Page - ON Semiconductor

   
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MC74LCX00
LCX DATA
BR1339 — REV 3
3
MOTOROLA
DC ELECTRICAL CHARACTERISTICS (continued)
TA = –40°C to +85°C
Symbol
Characteristic
Condition
Min
Max
Unit
II
Input Leakage Current
2.7V
≤ VCC ≤ 3.6V; 0V ≤ VI ≤ 5.5V
±5.0
µA
ICC
Quiescent Supply Current
2.7
≤ VCC ≤ 3.6V; VI = GND or VCC
10
µA
2.7
≤ VCC ≤ 3.6V; 3.6 ≤ VI ≤ 5.5V
±10
µA
∆ICC
Increase in ICC per Input
2.7
≤ VCC ≤ 3.6V; VIH = VCC – 0.6V
500
µA
AC CHARACTERISTICS (tR = tF = 2.5ns; CL = 50pF; RL = 500Ω)
Limits
TA = –40°C to +85°C
VCC = 3.0V to 3.6V
VCC = 2.7V
Symbol
Parameter
Waveform
Min
Max
Max
Unit
tPLH
tPHL
Propagation Delay
Input to Output
1
1.5
1.5
5.2
5.2
6.0
6.0
ns
tOSHL
tOSLH
Output–to–Output Skew
(Note 3.)
1.0
1.0
ns
3. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGH–to–LOW (tOSHL) or LOW–to–HIGH (tOSLH); parameter
guaranteed by design.
DYNAMIC SWITCHING CHARACTERISTICS
TA = +25°C
Symbol
Characteristic
Condition
Min
Typ
Max
Unit
VOLP
Dynamic LOW Peak Voltage (Note 4.)
VCC = 3.3V, CL = 50pF, VIH = 3.3V, VIL = 0V
0.8
V
VOLV
Dynamic LOW Valley Voltage (Note 4.)
VCC = 3.3V, CL = 50pF, VIH = 3.3V, VIL = 0V
0.8
V
4. Number of outputs defined as “n”. Measured with “n–1” outputs switching from HIGH–to–LOW or LOW–to–HIGH. The remaining output is
measured in the LOW state.
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Condition
Typical
Unit
CIN
Input Capacitance
VCC = 3.3V, VI = 0V or VCC
7
pF
COUT
Output Capacitance
VCC = 3.3V, VI = 0V or VCC
8
pF
CPD
Power Dissipation Capacitance
10MHz, VCC = 3.3V, VI = 0V or VCC
25
pF


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