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FOD816 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FOD816 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 www.fairchildsemi.com FOD816 Series Rev. 1.0.3 Electrical/Characteristics (TA = 25°C Unless otherwise specified.) Individual Component Characteristics Transfer Characteristics (TA = 25°C Unless otherwise specified.) Isolation Characteristics NOTES 1. Current Transfer Ratio (CTR) = IC/IF x 100%. Parameter Test Conditions Symbol Min Typ Max Unit INPUT Forward Voltage (IF = ±20 mA) VF — 1.2 1.4 V Terminal Capacitance (V = 0, f = 1 kHz) Ct —50 250 pF OUTPUT Collector Dark Current (VCE = 10 V, IF = 0) ICEO —— 1 µA Collector-Emitter Breakdown Voltage (IC = 0.1 mA, IF = 0) BVCEO 35 — — V Emitter-Collector Breakdown Voltage (IE = 10 µA, IF = 0) BVECO 6— — V DC Characteristic Test Conditions Symbol Min Typ Max Unit Collector Current (IF = ±1 mA, VCE = 2 V) IC 6— 75 mA Current Transfer Ratio1 CTR 600 — 7,500 % Collector-Emitter Saturation Voltage (IF = ±20 mA, IC = 5 mA) VCE (sat) — 0.8 1 V Isolation Resistance (DC500V 40~60% R.H.) Riso 5x1010 1x1011 — Ω Floating Capacitance (V = 0, f = 1 MHz) Cf — 0.6 1 pF Cut-Off Frequency (VCE = 5 V, IC = 2 mA, RL = 100 Ω, -3dB) fC 16 — KHz Response Time (Rise) (VCE = 2 V, IC = 10 mA, RL = 100 Ω tr —60 300 µs Response Time (Fall) tf —53 250 µs Characteristic Test Conditions Symbol Min Typ Max Units Input-Output Isolation Voltage (note 3) f = 60Hz, t = 1 min VISO 5000 Vac(rms) Isolation Resistance (VI-O = 500 VDC) RISO 5 x 1010 1011 Ω Isolation Capacitance (VI-O = 0, f = 1 MHz) CISO 0.6 1.0 pf |
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