PUMD2 datasheet(5/10 Pages) PHILIPS

Part #	PUMD2

Description	NPN/PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 22 kohm

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 10 page

2004 Apr 21

5

Philips Semiconductors

Product speciﬁcation

NPN/PNP resistor-equipped transistors;

R1 = 22 k

Ω, R2 = 22 kΩ

PEMD2; PIMD2; PUMD2

THERMAL CHARACTERISTICS

Notes

1. Refer to standard mounting conditions.

2. Reflow soldering is the only recommended soldering method.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Per transistor

Rth(j-a)

thermal resistance from junction to ambient

Tamb ≤ 25 °C

SOT363

note 1

625

K/W

SOT457

note 1

417

K/W

SOT666

notes 1 and 2

625

K/W

Per device

Rth(j-a)

thermal resistance from junction to ambient

Tamb ≤ 25 °C

SOT363

note 1

416

K/W

SOT457

note 1

208

K/W

SOT666

notes 1 and 2

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

ICBO

collector-base cut-off current

VCB =50V; IE =0A

−−

100

nA

ICEO

collector-emitter cut-off current

VCE =30V; IB =0A

−−

1

µA

VCE =30V; IB = 0 A; Tj = 150 °C

−−

50

µA

IEBO

emitter-base cut-off current

VEB =5V; IC =0A

−−

180

µA

hFE

DC current gain

VCE =5V; IC = 5 mA

60

−−

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−−

150

V

Vi(off)

input-off voltage

VCE =5V; IC = 100 µA

−

1.1

0.8

V

Vi(on)

input-on voltage

VCE = 0.3 V; IC = 5 mA

2.5

1.7

−

V

R1

input resistor

15.4

22

28.6

k

Ω

resistor ratio

0.8

1

1.2

Cc

collector capacitance

VCB =10V; IE =ie =0A;

f = 1 MHz

TR1 (NPN)

−−

2.5

pF

TR2 (PNP)

−−

3pF

R2

R1

--------

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