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IL352 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. IL352
Description  Optocoupler, Phototransistor Output, With Base Connection
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IL352 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 83624
Rev. 1.5, 26-Oct-04
IL352
Vishay Semiconductors
Output
Coupler
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter voltage
VCE
70
V
Emitter-base voltage
VEBO
7.0
V
Collector current
IC
50
mA
t
≤ 1.0 ms
IC
100
mA
Total power dissipation
Pdiss
150
mW
Derate linearly from 25 °C
2.5
mW/°C
Parameter
Test condition
Symbol
Value
Unit
Isolation test voltage (between
emitter and detector referred to
climate DIN 40046, part 2,
Nov. 74)
t = 1.0 sec.
VISO
3000
VRMS
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Storage temperature range
Tstg
- 40 to + 150
°C
Ambient temperature range
Tamb
- 40 to + 85
°C
Junction temperature
Tj
100
°C
Soldering temperature
max 10 s, Dip soldering distance
to seating plane
≥ 1.5 mm
Tsld
260
°C
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 10 mA
VF
1.3
1.5
V
Reverse current
VR = 6.0 V
IR
0.1
10
µA
Capacitance
VR = 0, f = 1.0 MHz
CO
25
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter breakdown
voltage
IC = 1.0 mA, IE = 100 µABVCEO
30
V
Emitter-collector breakdown
voltage
IC = 1.0 mA, IE = 100 µABVECO
7.0
V
Collector-emitter leakage
current
VCE = 10 V, IF = 0, TA = 25 °C
ICEO
5.0
50
nA
VCE = 30 V, IF = 0, TA = 85 °C
ICEO
500
µA
Collector-base breakdown
voltage
IC = 100 µABVCBO
70
V
Collector-emitter capacitance
VCE = 0
CCE
6.0
pF


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