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IL352 Datasheet(PDF) 2 Page - Vishay Siliconix |
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IL352 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page  www.vishay.com 2 Document Number 83624 Rev. 1.5, 26-Oct-04 IL352 Vishay Semiconductors Output Coupler Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Parameter Test condition Symbol Value Unit Collector-emitter voltage VCE 70 V Emitter-base voltage VEBO 7.0 V Collector current IC 50 mA t ≤ 1.0 ms IC 100 mA Total power dissipation Pdiss 150 mW Derate linearly from 25 °C 2.5 mW/°C Parameter Test condition Symbol Value Unit Isolation test voltage (between emitter and detector referred to climate DIN 40046, part 2, Nov. 74) t = 1.0 sec. VISO 3000 VRMS Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature range Tstg - 40 to + 150 °C Ambient temperature range Tamb - 40 to + 85 °C Junction temperature Tj 100 °C Soldering temperature max 10 s, Dip soldering distance to seating plane ≥ 1.5 mm Tsld 260 °C Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 10 mA VF 1.3 1.5 V Reverse current VR = 6.0 V IR 0.1 10 µA Capacitance VR = 0, f = 1.0 MHz CO 25 pF Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown voltage IC = 1.0 mA, IE = 100 µABVCEO 30 V Emitter-collector breakdown voltage IC = 1.0 mA, IE = 100 µABVECO 7.0 V Collector-emitter leakage current VCE = 10 V, IF = 0, TA = 25 °C ICEO 5.0 50 nA VCE = 30 V, IF = 0, TA = 85 °C ICEO 500 µA Collector-base breakdown voltage IC = 100 µABVCBO 70 V Collector-emitter capacitance VCE = 0 CCE 6.0 pF |
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