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IKW30N60T Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IKW30N60T Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 13 page IKW30N60T TrenchStop Series q Power Semiconductors 1 Rev. 2.1 Dev-04 Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5 µs • Designed for : - Frequency Converters - Uninterruptible Power Supply • Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) • Positive temperature coefficient in VCE(sat) • Low EMI • Low Gate Charge • Very soft, fast recovery anti-parallel EmCon HE diode • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package Ordering Code IKW30N60T 600V 30A 1.5V 175 °C K30T60 TO-247 Q67040S4717 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current, limited by Tjmax TC = 25 °C TC = 100 °C IC 60 30 Pulsed collector current, tp limited by Tjmax ICpuls 90 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 90 Diode forward current, limited by Tjmax TC = 25 °C TC = 100 °C IF 60 30 Diode pulsed current, tp limited by Tjmax IFpuls 90 A Gate-emitter voltage VGE ±20 V Short circuit withstand time 1) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C tSC 5 µs Power dissipation TC = 25 °C Ptot 187 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 °C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E P-TO-247-3-1 (TO-220AC) |
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