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MC74HC1G04 Datasheet(PDF) 3 Page - ON Semiconductor

Part No. MC74HC1G04
Description  High speed CMOS inverter fabricated with silicon gate CMOS technology
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC74HC1G04 Datasheet(HTML) 3 Page - ON Semiconductor

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MC74HC1G04
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
VCC
TA = 25_C
TA v 85_C
*55_C v TA v 125_C
Symbol
Parameter
Test Conditions
(V)
Min
Typ
Max
Min
Max
Min
Max
Unit
VIH
Minimum High−Level
Input Voltage
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.20
1.5
2.1
3.15
4.20
1.5
2.1
3.15
4.20
V
VIL
Maximum Low−Level
Input Voltage
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.80
0.5
0.9
1.35
1.80
0.5
0.9
1.35
1.80
V
VOH
Minimum High−Level
Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOH = −20 mA
2.0
3.0
4.5
6.0
1.9
2.9
4.4
5.9
2.0
3.0
4.5
6.0
1.9
2.9
4.4
5.9
1.9
2.9
4.4
5.9
V
VIN = VIH or VIL
IOH = −2 mA
IOH = −2.6 mA
4.5
6.0
4.18
5.68
4.31
5.80
4.13
5.63
4.08
5.58
VOL
Maximum Low−Level
Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOL = 20 mA
2.0
3.0
4.5
6.0
0.0
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
VIN = VIH or VIL
IOL = 2 mA
IOL = 2.6 mA
4.5
6.0
0.17
0.18
0.26
0.26
0.33
0.33
0.40
0.40
IIN
Maximum Input
Leakage Current
VIN = 6.0 V or GND
6.0
$0.1
$1.0
$1.0
mA
ICC
Maximum Quiescent
Supply Current
VIN = VCC or GND
6.0
1.0
10
40
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 6.0 ns)
TA = 25_C
TA v 85_C
*55_C v TA v 125_C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Min
Max
Min
Max
Unit
tPLH,
t
Maximum
Propagation Delay
VCC = 5.0 V
CL = 15 pF
3.5
15
20
25
ns
tPHL
Propagation Delay,
Input A or B to Y
VCC = 2.0 V
CL = 50 pF
VCC = 3.0 V
VCC = 4.5 V
VCC = 6.0 V
18
10
7
6
100
27
20
17
125
35
25
21
155
90
35
26
tTLH,
t
Output Transition
Time
VCC = 5.0 V
CL = 15 pF
3
10
15
20
ns
tTHL
Time
VCC = 2.0 V
CL = 50 pF
VCC = 3.0 V
VCC = 4.5 V
VCC = 6.0 V
25
16
11
9
125
35
25
21
155
45
31
26
200
60
38
32
CIN
Maximum Input
Capacitance
5
10
10
10
pF
Typical @ 25
_C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Note 6)
10
pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD  VCC2  fin + ICC  VCC.


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