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MC74HC1G04 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MC74HC1G04
Description  High speed CMOS inverter fabricated with silicon gate CMOS technology
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC74HC1G04 Datasheet(HTML) 2 Page - ON Semiconductor

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MC74HC1G04
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage
*0.5 to )7.0
V
VIN
DC Input Voltage
*0.5 to VCC )0.5
V
VOUT
DC Output Voltage
*0.5 to VCC )0.5
V
IIK
DC Input Diode Current
$20
mA
IOK
DC Output Diode Current
$20
mA
IOUT
DC Output Sink Current
$12.5
mA
ICC
DC Supply Current per Supply Pin
$25
mA
TSTG
Storage Temperature Range
*65 to )150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
260
_C
TJ
Junction Temperature Under Bias
)150
_C
qJA
Thermal Resistance
SC70−5/SC−88A (Note 1)
TSOP−5
350
230
_C/W
PD
Power Dissipation in Still Air at 85
_C
SC70−5/SC−88A
TSOP−5
150
200
mW
MSL
Moisture Sensitivity
Level 1
FR
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
VESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
u2000
u200
N/A
V
ILATCHUP
Latchup Performance
Above VCC and Below GND at 125_C (Note 5)
$500
mA
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage
2.0
6.0
V
VIN
DC Input Voltage
0.0
VCC
V
VOUT
DC Output Voltage
0.0
VCC
V
TA
Operating Temperature Range
*55
)125
_C
tr , tf
Input Rise and Fall Time
VCC = 2.0 V
VCC = 3.0 V
VCC = 4.5 V
VCC = 6.0 V
0
0
0
0
1000
600
500
400
ns
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature
°C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
1
10
100
1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
TIME, YEARS


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