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06035J0R4BBS Datasheet(PDF) 1 Page - NXP Semiconductors

Part # 06035J0R4BBS
Description  Heterostructure Field Effect Transistor (GaAs HFET)
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

06035J0R4BBS Datasheet(HTML) 1 Page - NXP Semiconductors

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MMH3111NT1
1
RF Device Data
Freescale Semiconductor, Inc.
MMH3111NT1
250--4000 MHz, 12 dB
22.5 dBm
GaAs HFET GPA
Heterostructure Field Effect
Transistor (GaAs HFET)
Broadband High Linearity Amplifier
The MMH3111NT1 is a general purpose amplifier that is internally
input and output prematched. It is designed for a broad range of Class A,
small--signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 250 to 4000 MHz such as cellular,
PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.
Features
 Frequency: 250 to 4000 MHz
 P1dB: 22.5 dBm @ 900 MHz
 Small--Signal Gain: 12 dB @ 900 MHz
 Third Order Output Intercept Point: 44 dBm @ 900 MHz
 Single 5 V Supply
 Internally Prematched to 50 Ohms
 Internally Biased
 Cost--effective SOT--89 Surface Mount Plastic Package
 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
SOT--89
Table 1. Typical Performance (1)
Characteristic
Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small--Signal Gain
(S21)
Gp
12
11.3
10
dB
Input Return Loss
(S11)
IRL
--14
--15
--16
dB
Output Return Loss
(S22)
ORL
--14
--19
--14
dB
Power Output @1dB
Compression
P1dB
22.5
22
22
dBm
Third Order Output
Intercept Point
OIP3
44
44
42
dBm
1. VDD =5 Vdc, TA =25C, 50 ohm system, application circuit tuned
for specified frequency.
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
VDD
6
V
Supply Current
IDD
300
mA
RF Input Power
Pin
20
dBm
Storage Temperature Range
Tstg
--65 to +150
C
Junction Temperature
TJ
150
C
Table 3. Thermal Characteristics
Characteristic
Symbol
Value (2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 95C, 5 Vdc, 150 mA, no RF applied
RJC
37.5
C/W
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MMH3111NT1
Rev. 4.1, 10/2014
Freescale Semiconductor
Technical Data
 Freescale Semiconductor, Inc., 2007--2008, 2010--2012, 2014. All rights reserved.


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