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06035J0R4BBS Datasheet(PDF) 4 Page - NXP Semiconductors

Part # 06035J0R4BBS
Description  Heterostructure Field Effect Transistor (GaAs HFET)
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

06035J0R4BBS Datasheet(HTML) 4 Page - NXP Semiconductors

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4
RF Device Data
Freescale Semiconductor, Inc.
MMH3111NT1
50 OHM TYPICAL CHARACTERISTICS
35
47
4
VDD, DRAIN VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Drain Voltage
45
43
41
39
4.2
4.4
5
4.6
100
--40
--20
0
20
40
60
80
43
48
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
46
45
44
Figure 10. Third Order Intermodulation versus
Output Power
Pout, OUTPUT POWER (dBm)
10
12
14
--70
--25
--55
--65
--45
150
104
106
120
Figure 11. MTTF versus Junction Temperature
105
125
130
135
140
145
TJ, JUNCTION TEMPERATURE (C)
NOTE: The MTTF is calculated with VDD =5 Vdc, IDD = 150 mA
4
0
8
0
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
6
4
2
12
3
--70
--30
10
Pout, OUTPUT POWER (dBm)
Figure 13. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
--40
--50
--60
16
14
12
19
47
VDD = 5 Vdc, f = 900 MHz, 10 dBm per Tone
Two--Tone Measurements, 1 MHz Tone Spacing
18
--35
11
918
37
4.8
--30
--40
--50
--60
16
13
15
17
f = 900 MHz, 10 dBm per tone
Two--Tone Measurements, 1 MHz Tone Spacing
VDD =5 Vdc
f = 900 MHz
1 MHz Tone Spacing
VDD = 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF
VDD =5 Vdc


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