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06035J0R4BBS Datasheet(PDF) 3 Page - NXP Semiconductors

Part # 06035J0R4BBS
Description  Heterostructure Field Effect Transistor (GaAs HFET)
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

06035J0R4BBS Datasheet(HTML) 3 Page - NXP Semiconductors

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MMH3111NT1
3
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS
5
20
0
TC =85C
f, FREQUENCY (GHz)
Figure 2. Small--Signal Gain (S21) versus
Frequency
15
12
3
--40C
0
0
S22
f, FREQUENCY (GHz)
Figure 3. Input/Output Loss versus Frequency
--20
12
3
24
8
13
10
Pout, OUTPUT POWER (dBm)
Figure 4. Small--Signal Gain versus Output
Power
12
11
10
9
12
14
3.5
3
2.5
2
1.5
1
0.5
16
24
23
21
19
f, FREQUENCY (GHz)
Figure 5. P1dB versus Frequency
22
20
6
0
160
0
VDD, DRAIN VOLTAGE (V)
Figure 6. Drain Current versus Drain Voltage
140
100
20
15
60
23
4
4
36
50
0
f, FREQUENCY (GHz)
Figure 7. Third Order Output Intercept Point
versus Frequency
48
46
44
42
12
3
18
16
VDD =5 Vdc
900 MHz
2140 MHz
1960 MHz
2600 MHz
3500 MHz
120
80
40
--10
S11
4
20
18
17
40
10
4
25C
--30
--40
22
38
VDD =5 Vdc
VDD =5 Vdc
VDD =5 Vdc
VDD = 5 Vdc, 10 dBm per Tone
Two--Tone Measurements, 1 MHz Tone Spacing


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