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06035J1R8BBS Datasheet(PDF) 12 Page - NXP Semiconductors

Part # 06035J1R8BBS
Description  Heterojunction Bipolar Transistor Technology (InGaP HBT)
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

06035J1R8BBS Datasheet(HTML) 12 Page - NXP Semiconductors

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RF Device Data
Freescale Semiconductor, Inc.
MMA20312BVT1
TYPICAL CHARACTERISTICS — IS--95
18
810
22
12
14
16
20
180
40
60
Figure 18. ACPR versus Collector Current
versus Output Power
Pout, OUTPUT POWER (dBm)
--10
--15
--20
--50
18
--35
--25
--45
810
80
100
120
140
160
--40
--55
22
200
20
0
--30
12
14
16
20
ACPR
45
10
15
Figure 19. Power Gain versus Power Added
Efficiency versus Output Power
Pout, OUTPUT POWER (dBm)
29
28
27
21
24
26
22
20
25
30
35
40
23
20
50
5
0
25
30
Gain
PAE
Figure 20. P1dB versus Frequency, CW
f, FREQUENCY (MHz)
30
29
28
25
27
1800
24
26
1840
31
1880
1920
2000
1960
ICC
VCC1 =VCC2 =VBIAS =3.3 Vdc
--60
VCC1 =VCC2 =VBIAS =3.3 Vdc
f = 1960 MHz
VCC1 =VCC2 =VBIAS =3.3 Vdc
f = 1960 MHz
Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth


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