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06035J1R8BBS Datasheet(PDF) 1 Page - NXP Semiconductors

Part # 06035J1R8BBS
Description  Heterojunction Bipolar Transistor Technology (InGaP HBT)
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

06035J1R8BBS Datasheet(HTML) 1 Page - NXP Semiconductors

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MMA20312BVT1
1
RF Device Data
Freescale Semiconductor, Inc.
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMA20312BV is a 2--stage high efficiency, Class AB InGaP HBT
amplifier designed for use as a linear driver amplifier in wireless base station
applications as well as an output stage in femtocell or repeater applications. It
is suitable for applications with frequencies from 1800 to 2200 MHz such as
CDMA, TD--SCDMA, PCS, UMTS and LTE at operating voltages from 3 to 5 V.
The amplifier is housed in a cost--effective, surface mount QFN plastic package.
 Typical Performance: VCC =5 Vdc, ICQ =70 mA, Pout =17 dBm
Frequency
Gps
(dB)
ACPR
(dBc)
PAE
(%)
Test Signal
1880 MHz
29.0
--47.4
9.1
TD--SCDMA
1920 MHz
29.0
--46.7
9.0
TD--SCDMA
2010 MHz
27.4
--52.0
9.3
TD--SCDMA
2025 MHz
26.8
--50.0
9.5
TD--SCDMA
2140 MHz
27.0
--51.7
9.4
W--CDMA
Features
 Frequency: 1800--2200 MHz
 P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
 Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
 OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)
 Active Bias Control (adjustable externally)
 Single 3 to 5 V Supply
 Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package
 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
Table 1. Typical Performance (1)
Characteristic
Symbol
1800
MHz
2140
MHz
2200
MHz
Unit
Small--Signal Gain
(S21)
Gp
28.8
26.4
25.5
dB
Input Return Loss
(S11)
IRL
--17.6 --10.9
--9.7
dB
Output Return Loss
(S22)
ORL
--20.3 --14.7 --13.7
dB
Power Output @ 1dB
Compression
P1dB
30.5
30.5
30.5
dBm
1. VCC1 =VCC2 =VBIAS =5 Vdc, TA =25C, 50 ohm system,
CW Application Circuit
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
VCC
6
V
Supply Current
ICC
550
mA
RF Input Power
Pin
14
dBm
Storage Temperature Range
Tstg
--65 to +150
C
Junction Temperature
TJ
175
C
Table 3. Thermal Characteristics
Characteristic
Symbol
Value (2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 86C, VCC1 =VCC2 =VBIAS =5 Vdc
RJC
52
C/W
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor
Technical Data
Document Number: MMA20312BV
Rev. 2, 9/2014
1800--2200 MHz, 27.2 dB
30.5 dBm
InGaP HBT LINEAR AMPLIFIER
MMA20312BVT1
QFN 3  3
 Freescale Semiconductor, Inc., 2011, 2014. All rights reserved.


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