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FDZ2554PZ Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDZ2554PZ Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 6 page  August 2004 ©2004 Fairchild Semiconductor Corporation FDZ2554PZ Rev. C3 (W) FDZ2554PZ Monolithic Common Drain P-Channel 2.5V Specified PowerTrench®®®® BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554PZ minimizes both PCB space and RDS(ON). This monolithic common drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). Applications • Battery management • Load switch • Battery protection Features • –6.5 A, –20 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V RDS(ON) = 45 mΩ @ VGS = –2.5 V • >4800V ESD Protection • Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8 • Ultra-thin package: less than 0.80 mm height when mounted to PCB • Outstanding thermal transfer characteristics: significantly better than SO-8 • Ultra-low Qg x RDS(ON) figure-of-merit • High power and current handling capability Q2 Q1 Pin 1 G S D D S S S D S S S S G S S D D D Bottom Pin 1 Top S S G G D Q1 Q2 Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) –6.5 A – Pulsed –20 PD Power Dissipation (Steady State) (Note 1a) 2.1 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 60 °C/W RθJB Thermal Resistance, Junction-to-Ball (Note 1b) 6.3 RθJC Thermal Resistance, Junction-to-Case (Note 1) 0.6 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2554Z FDZ2554PZ 7’’ 12mm 3000 units |
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