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FDS8870_NL Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDS8870_NL Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page FDS8870 Rev. A3 www.fairchildsemi.com 2 MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Electrical Characteristics T A = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Current 18 A Continuous (TA = 25 oC, V GS = 10V, R θJA = 50 oC/W) Continuous (TA = 25 oC, V GS = 4.5V, R θJA = 50 oC/W) 17 A Pulsed Figure 4 A EAS Single Pulse Avalanche Energy (Note 1) 420 mJ PD Power dissipation 2.5 W Derate above 25 oC20 mW/ oC TJ, TSTG Operating and Storage Temperature -55 to 150 oC RθJC Thermal Resistance, Junction to Case (Note 2) 25 oC/W RθJA Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50 oC/W RθJA Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85 oC/W Device Marking Device Package Reel Size Tape Width Quantity FDS8870 FDS8870 SO-8 330mm 12mm 2500 units FDS8870 FDS8870_NL (Note 4) SO-8 330mm 12mm 2500 units Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V IDSS Zero Gate Voltage Drain Current VDS = 24V - - 1 µA VGS = 0V TA = 150 oC- - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V rDS(ON) Drain to Source On Resistance ID = 18A, VGS = 10V - 0.0035 0.0042 Ω ID = 17A, VGS = 4.5V - 0.0039 0.0049 ID = 18A, VGS = 10V, TA = 150 oC - 0.0055 0.0072 CISS Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz -4615 - pF COSS Output Capacitance - 900 - pF CRSS Reverse Transfer Capacitance - 450 - pF RG Gate Resistance VGS = 0.5V, f = 1MHz 0.5 2.0 3.5 Ω Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 15V ID = 18A Ig = 1.0mA -85 112 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 45 62 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 4.6 6.0 nC Qgs Gate to Source Gate Charge - 11 - nC Qgs2 Gate Charge Threshold to Plateau - 6.4 - nC Qgd Gate to Drain “Miller” Charge - 15 - nC |
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