FDS8870 Rev. A3

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2

Thermal Characteristics

Package Marking and Ordering Information

Off Characteristics

On Characteristics

Dynamic Characteristics

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

30

V

Gate to Source Voltage

±20

V

Drain Current

18

A

17

A

Pulsed

Figure 4

A

Single Pulse Avalanche Energy (Note 1)

420

mJ

Power dissipation

2.5

W

Derate above 25

mW/

Operating and Storage Temperature

-55 to 150

Thermal Resistance, Junction to Case (Note 2)

25

Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)

50

Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)

85

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDS8870

FDS8870

SO-8

330mm

12mm

2500 units

FDS8870

FDS8870_NL (Note 4)

SO-8

330mm

12mm

2500 units

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Drain to Source Breakdown Voltage

30

-

-

V

Zero Gate Voltage Drain Current

-

-

1

µA

-

250

Gate to Source Leakage Current

-

-

±100

nA

Gate to Source Threshold Voltage

1.2

-

2.5

V

Drain to Source On Resistance

-

0.0035

0.0042

Ω

-

0.0039

0.0049

-

0.0055

0.0072

Input Capacitance

f = 1MHz

-4615

-

pF

Output Capacitance

-

900

-

pF

Reverse Transfer Capacitance

-

450

-

pF

Gate Resistance

0.5

2.0

3.5

Ω

Total Gate Charge at 10V

-85

112

nC

Total Gate Charge at 5V

-

45

62

nC

Threshold Gate Charge

-

4.6

6.0

nC

Gate to Source Gate Charge

-

11

-

nC

Gate Charge Threshold to Plateau

-

6.4

-

nC

Gate to Drain “Miller” Charge

-

15

-

nC