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FDR8702H Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FDR8702H Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FDR8702H Rev C (W) Electrical CharacteristicsT A = 25°C unless otherwise noted Symbol Parameter Test Conditions Q Min Typ Max Units Drain-Source Diode Characteristics IS Maximum Continuous Drain–Source Diode Forward Current Q1 0.7 A Q2 –0.7 VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.7A, Note 2 VGS = 0 V, IS = –0.7A, Note 2 Q1 Q2 0.7 –0.7 1.2 –1.2 V trr Reverse Recovery Time Q1 Q2 16 22 ns Irm Maximum Reverse Recovery Current Q1 Q2 0.6 0.7 A Qrr Reverse Recovery Charge For Q1: IF = 3.6A, dIF/dt = 100A/µs For Q2: IF = –2.6A, dIF/dt = 100A/µs Q1 Q2 5 8 nC Notes: 1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθCA is determined by the user's board design. a) 76°C/W when mounted on a 1in 2 pad of 2 oz copper b) 146°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
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Similar Description - FDR8702H |
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