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M5M5W416CWG-85HI Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. M5M5W416CWG-85HI
Description  4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M5M5W416CWG-85HI Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

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M ITSUBISHI ELECTRIC
M5M5W416CWG -85HI
2000.11.22
Ver. 1.0
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
* Typical parameter indicates the value for the center
of distribution at 2.0V, and not 100% tested.
1
DESCRIPTION
The M5M5W416C is a f amily of low v oltage 4-Mbit static RAMs
organized as 262144-words by 16-bit, f abricated by Mitsubishi's
high-perf ormance 0.18µm CMOS technology.
The M5M5W416C is suitable f or memory applications where a
simple interf acing , battery operating and battery backup are the
important design objectiv es.
M5M5W416CWG is packaged in a CSP (chip scale package),
with the outline of 7.0mm x 8.5mm, ball matrix of 6 x 8 (48ball)
and ball pitch of 0.75mm. It giv es the best solution f or
a compaction
of mounting area as well as f lexibility of wiring pattern of printed
circuit boards.
FEATURES
- Single 1.65~2.3V power supply
- Small stand-by current: 0.2µA (2.0V, ty p.)
- No clocks, No ref resh
- Data retention supply v oltage =1.5V
- All inputs and outputs are TTL compatible.
- Easy memory expansion by S1, S2, BC1 and BC2
- Common Data I/O
- Three-state outputs: OR-tie capability
- OE prev ents data contention in the I/O bus
- Process technology: 0.18µm CMOS
- Package: 48ball 7.0mm x 8.5mm CSP
PIN CONFIGURATION
A0 ~ A17
DQ1 ~ DQ16
S1
W
OE
BC1
Address input
Data input / output
Chip select input 1
Write control input
Output enable input
Lower By te (DQ1 ~ 8)
Pin
Function
Vcc
GND
Power supply
Ground supply
BC2
Upper By te (DQ9 ~ 16)
S2
Chip select input 2
(TOP VIEW)
Outline:
48FJA
NC: No Connection
1
2
3
4
5
6
A
B
C
D
E
F
G
DQ3
A7
DQ1
S2
VCC
GND
DQ6
A2
S1
DQ2
DQ4
DQ5
DQ7
A1
A4
A6
A5
A17
A16
A15
A0
A3
GND
A14
OE
BC2
DQ15
DQ13
DQ12
DQ10
BC1
DQ16
DQ14
GND
VCC
DQ11
DQ8
W
A13
A12
N.C.
DQ9
N.C.
A11
A10
A9
A8
H
Those are summarized in the part name table below.
30mA
(10MHz)
3mA
(1MHz)
Version,
Operating
temperature
Part name
Power
Supply
Access time
max.
Stand-by c urrent
Ratings (max.)
Active
current
(2.3V, max)
Icc1
70°C
85°C
25°C
I-version
-40 ~ +85°C
M5M5W416CWG -85HI 1.65 ~ 2.3V
85ns
* Ty pical
40°C
25°C 40°C
15
8
2
1
0.4
0.2
N C


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