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NSDEMN11XV6T1 Datasheet(PDF) 1 Page - ON Semiconductor

Part # NSDEMN11XV6T1
Description  Common Cathode Quad Array Switching Diode
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NSDEMN11XV6T1 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2003
February, 2003 - Rev. 1
1
Publication Order Number:
NSDEMN11XV6T1/D
NSDEMN11XV6T1,
NSDEMN11XV6T5
Common Cathode Quad
Array Switching Diode
This Common Cathode Epitaxial Planar Quad Diode is designed for
use in ultra high speed switching applications. This device is housed in
the SOT-563 package which is designed for low power surface mount
applications, where board space is at a premium.
Fast t
rr
Low C
D
Available in 8 mm; 7 Inch Tape and Reel
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
80
Vdc
Peak Reverse Voltage
VRM
80
Vdc
Forward Current
IF
100
mAdc
Peak Forward Current
IFM
300
mAdc
Peak Forward Surge Current
IFSM
(Note 1)
2.0
Adc
1. t = 1
mS
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25
°C
PD
357
(Note 2)
2.9
(Note 2)
mW
mW/
°C
Thermal Resistance Junction-to-Ambient
RqJA
350
(Note 2)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25
°C
PD
500
(Note 2)
4.0
(Note 2)
mW
mW/
°C
Thermal Resistance Junction-to-Ambient
RqJA
250
(Note 2)
°C/W
Junction and Storage Temperature
TJ, Tstg
- 55 to
+150
°C
2. FR-4 @ Minimum Pad
http://onsemi.com
SOT-563
CASE 463A
PLASTIC
1
2
3
6
5 4
N9 = Specific Device Code
D
= Date Code
MARKING
DIAGRAM
N9 D
(1)
(2)
(3)
(4)
(5)
(6)
Device
Package
Shipping
ORDERING INFORMATION
NSDEMN11XV6T1
SOT-563
4 mm pitch
4000/Tape & Reel
NSDEMN11XV6T5
SOT-563
2 mm pitch
8000/Tape & Reel


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