©2005 Fairchild Semiconductor Corporation

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BC327A Rev. A

BC327A

PNP Epitaxial Silicon Transistor

Switching and Amplifier Applications

• Suitable for AF-Driver stages and low power output stages

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

-60

V

Collector-Emitter Voltage

-60

V

Emitter-Base Voltage

-5

V

Collector Current (DC)

-800

mA

Collector Power Dissipation

625

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Emitter Breakdown Voltage

-60

V

Collector-Emitter Breakdown Voltage

-60

V

Emitter-Base Breakdown Voltage

-5

V

Collector Cut-off Current

-100

nA

DC Current Gain

100

40

400

Collector-Emitter Saturation Voltage

-0.7

V

Base-Emitter On Voltage

-1.2

V

Current Gain Bandwidth Product

100

MHz

Output Capacitance

12

pF

1. Collector 2. Base 3. Emitter

TO-92

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