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XP134A11A1SR Datasheet(PDF) 4 Page - Torex Semiconductor |
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XP134A11A1SR Datasheet(HTML) 4 Page - Torex Semiconductor |
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4 / 4 page  XP134A11A1SR Power MOS FET 432 u 10 100 1000 10000 -30 -25 -20 -15 -10 -5 0 Coss Ciss Crss 10 100 1000 -10 -8 -6 -4 -2 0 tr td(on) td(off) tf ■ Electrical Characteristics Drain / Source Voltage:Vds (V) Drain Current:Id (A) Switching Time Vs. Drain Current Vgs=-5V, Vdd≒-10V, PW=10μs, duty≦1%, Ta=25℃ Vgs=0V, f=1MHz, Ta=25℃ Drain / Source Voltage Vs. Capacitance -10 -8 -6 -4 -2 0 0 5 10 15 20 25 -16 -12 -8 -4 0 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 Vgs=0V, 4.5V -4.5V 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 Standardized Transition Thermal Resistance Vs. Pulse Width Rth (ch-a) = 62.5 ℃/W ( Implemented on a glass epoxy PCB ) Pulse Width:PW ( sec ) Single Pulse Gate Charge:Qg ( nc ) Source / Drain Voltage:Vsd (V) Ta=25℃, Pulse Test Gate / Source Voltage Vs. Gate Charge Reverse Drain Current Vs. Source / Drain Voltage Vds=-10V, Id=-4A, Ta=25℃ |
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