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SI7991DP Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI7991DP
Description  Dual P-Channel 30-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI7991DP Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Si7991DP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72515
S-32127—Rev. B, 27-Oct-03
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 mA
−1
−3
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = −30 V, VGS = 0 V
−1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = −30 V, VGS = 0 V, TJ = 55_C
−5
mA
On-State Drain Currenta
ID(on)
VDS v −5 V, VGS = −10 V
−30
A
Drain Source On State Resistancea
rDS( )
VGS = −10 V, ID = −10.0 A
0.019
0.023
W
Drain-Source On-State Resistancea
rDS(on)
VGS = −4.5 V, ID = −8.2 A
0.027
0.035
W
Forward Transconductancea
gfs
VDS = −15 V, ID = −10.0 A
22
S
Diode Forward Voltagea
VSD
IS = −2.9 A, VGS = 0 V
−0.8
−1.2
V
Dynamicb
Total Gate Charge
Qg
38
57
Gate-Source Charge
Qgs
VDS = −15 V, VGS = −10 V, ID = −10.0 A
6.3
nC
Gate-Drain Charge
Qgd
9.7
Gate Resistance
Rg
f = 1 MHz
10
W
Turn-On Delay Time
td(on)
10
15
Rise Time
tr
VDD = −15 V, RL = 15 W
15
25
Turn-Off Delay Time
td(off)
VDD = −15 V, RL = 15 W
ID ^ −1 A, VGEN = −10 V, RG = 6 W
130
200
ns
Fall Time
tf
70
105
Source-Drain Reverse Recovery Time
trr
IF = −2.9 A, di/dt = 100 A/ms
45
70
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
6
12
18
24
30
0
1234
5
VGS = 10 thru 4 V
TC = 125_C
−55_C
3 V
25_C
Output Characteristics
Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
VGS − Gate-to-Source Voltage (V)


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