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SI7991DP Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI7991DP
Description  Dual P-Channel 30-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI7991DP Datasheet(HTML) 1 Page - Vishay Siliconix

   
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FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr Package
with Low 1.07-mm Profile
APPLICATIONS
D Load Switch
− Notebook PCs
− Desktop PCs
− Game Stations
D Battery Switch
Si7991DP
Vishay Siliconix
New Product
Document Number: 72515
S-32127—Rev. B, 27-Oct-03
www.vishay.com
1
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
−30
0.023 @ VGS = −10 V
−10.2
−30
0.035 @ VGS = −4.5 V
−8.1
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
6.15 mm
5.15 mm
Bottom View
PowerPAK SO-8
S1
G1
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
Ordering Information: Si7991DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
−30
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
−10.2
−6.6
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
−8.2
−5.3
A
Pulsed Drain Current
IDM
−30
A
continuous Source Current (Diode Conduction)a
IS
−2.9
−1.2
Maximum Power Dissipationa
TA = 25_C
PD
3.5
1.4
W
Maximum Power Dissipationa
TA = 70_C
PD
2.2
0.9
W
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Mi
J
ti
t A bi ta
t v 10 sec
R
28
35
Maximum Junction-to-Ambienta
Steady State
RthJA
60
85
_C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
3
3.7
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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