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SI6993DQ Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI6993DQ
Description  Dual P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI6993DQ Datasheet(HTML) 1 Page - Vishay Siliconix

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FEATURES
D TrenchFETr Power MOSFETS
APPLICATIONS
D Load Switch
D Battery Switch
Si6993DQ
Vishay Siliconix
New Product
Document Number: 72369
S-31912—Rev. A, 15-Sep-03
www.vishay.com
1
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
30
0.031 @ VGS = -10 V
-4.7
-30
0.048 @ VGS = -4.5 V
-3.8
D1
S1
S1
G1
1
2
3
4
8
7
6
5
D2
S2
S2
G2
TSSOP-8
Top View
D
S1
G1
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
Ordering Information: Si6993DQ -T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
-4.7
-3.6
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
-3.8
-3.2
A
Pulsed Drain Current (10 ms Pulse Width)
IDM
-30
A
Continuous Source Current (Diode Conduction)a
IS
-1.0
-0.70
Maximum Power Dissipationa
TA = 25_C
PD
1.14
0.83
W
Maximum Power Dissipationa
TA = 70_C
PD
0.73
0.53
W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Mi
J
ti
t A bi ta
t v 10 sec
R
86
110
Maximum Junction-to-Ambienta
Steady State
RthJA
124
150
_C/W
Maximum Junction-to-Foot
Steady State
RthJF
52
65
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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