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SI6991DQ Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI6991DQ
Description  Dual P-Channel 30-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI6991DQ Datasheet(HTML) 2 Page - Vishay Siliconix

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Si6991DQ
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72230
S-31066—Rev. A, 26-May-03
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 mA
- 1.0
- 3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 24 V, VGS = 0 V
-1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = - 24 V, VGS = 0 V, TJ = 55_C
-10
mA
On-State Drain Currenta
ID(on)
VDS w -5 V, VGS = - 10 V
-15
A
Drain Source On State Resistancea
r
VGS = - 10 V, ID = - 4.2 A
0.032
0.040
W
Drain-Source On-State Resistancea
rDS(on)
VGS = - 4.5 V, ID = - 3.2 A
0.054
0.068
W
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 4.2 A
13
S
Diode Forward Voltagea
VSD
IS = - 1.0 A, VGS = 0 V
- 0.76
- 1.2
V
Dynamicb
Total Gate Charge
Qg
8
12
Gate-Source Charge
Qgs
VDS = - 15 V, VGS = - 4.5 V, ID = - 4.2 A
2.6
nC
Gate-Drain Charge
Qgd
3.7
Turn-On Delay Time
td(on)
10
15
Rise Time
tr
VDD = - 15 V, RL = 15 W
10
15
Turn-Off Delay Time
td(off)
VDD = - 15 V, RL = 15 W
ID ^ - 1 A, VGEN = - 10 V, RG = 6 W
45
70
ns
Fall Time
tf
27
40
Source-Drain Reverse Recovery Time
trr
IF = - 1.0 A, di/dt = 100 A/ms
30
50
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
6
12
18
24
30
0
1234
5
0
6
12
18
24
30
0
1234
5
VGS = 10 thru 5 V
TC = - 55_C
125
_C
25
_C
Output Characteristics
Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
4 V
3 V


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