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SI4923DY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI4923DY
Description  Dual P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4923DY Datasheet(HTML) 2 Page - Vishay Siliconix

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Si4923DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72069
S-22120—Rev. A, 25-Nov-02
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250 mA
-1
-3
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
VDS = -24 V, VGS = 0 V
-1
m
Zero Gate Voltage Drain Current
IDSS
VDS = -24 V, VGS = 0 V, TJ = 55_C
-25
mA
On-State Drain Currenta
ID(on)
VDS = -5 V, VGS = -10 V
-30
A
VGS = -10 V, ID = -8.3 A
0.017
0.021
W
Drain-Source On-State Resistancea
rDS(on)
VGS = -4.5 V, ID = -6.8 A
0.025
0.031
W
Forward Transconductancea
gfs
VDS = -10 V, ID = -8.3 A
26
S
Diode Forward Voltagea
VSD
IS = -1.7 A, VGS = 0 V
-0.8
-1.2
V
Dynamicb
Total Gate Charge
Qg
45.5
70
Gate-Source Charge
Qgs
VDS = -15 V, VGS = -10 V, ID = -8.3 A
6.5
nC
Gate-Drain Charge
Qgd
12.6
Turn-On Delay Time
td(on)
15
25
Rise Time
tr
VDD = -15 V, RL = 15 W
10
15
Turn-Off Delay Time
td(off)
VDD = -15 V, RL = 15 W
ID ^ -1 A, VGEN = -10 V, RG = 6 W
135
210
ns
Fall Time
tf
80
120
Source-Drain Reverse Recovery Time
trr
IF = -1.7 A, di/dt = 100 A/ms
70
110
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
6
12
18
24
30
0
1234
5
VGS = 10 thru 4 V
TC = 125_C
-55
_C
25
_C
Output Characteristics
Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
3 V


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