FLASH MEMORY

2

K9E2G08B0M

Advanced

FEATURES

• Voltage Supply : 2.5V ~ 2.9V

• Organization

- Memory Cell Array : (256M + 8,192K)bits x 8bits

- Data Register : (512 + 16)bits x 8bits

• Automatic Program and Erase

- Page Program : (512 + 16)bits x 8bits

- Block Erase : (16K + 512)Bytes

• Page Read Operation

- Page Size : (512 + 16)Bytes

- Random Access

: 15

µs(Max.)

- Serial Page Access : 50ns(Min.)

• Fast Write Cycle Time

- Program time : 200

µs(Typ.)

- Block Erase Time : 2ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

256M x 8 Bits NAND Flash Memory

• Reliable CMOS Floating-Gate Technology

- Endurance

: 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Register Operation

• Intelligent Copy-Back

• Unique ID for Copyright Protection

• Package

- K9E2G08B0M-YCB0/YIB0

48 - Pin TSOP I (12 X 20 / 0.5 mm pitch)

- K9E2G08B0M-VCB0/VIB0

48 - Pin WSOP I (12 X 17 X 0.7mm)

- K9E2G08B0M-PCB0/PIB0

48 - Pin TSOP I (12 X 20 / 0.5 mm pitch)- Pb-free Package

- K9E2G08B0M-FCB0/FIB0

48 - Pin WSOP I (12 X 17 X 0.7mm)- Pb-free Package

Offered in 256Mx8bits, the K9E2G08B0M is 2Gbit with spare 64Mbit capacity. The device is offered in 2.7 Vcc. Its NAND cell provides

the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200

µs on

the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can be read out at

50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip

write control automates all program and erase functions including pulse repetition, where required, and internal verification and mar-

gining of data. Even the write-intensive systems can take advantage of the K9E2G08B0M

′s extended reliability of 100K program/

erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.

The K9E2G08B0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable

applications requiring non-volatility.

PRODUCT LIST

Part Number

Vcc Range

Organization

PKG Type

K9E2G08B0M-Y,P

2.5V ~ 2.9V

X8

TSOP1

K9E2G08B0M-V,F

WSOP1

GENERAL DISCRIPTION