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K9E2G08B0M-VCB0 Datasheet(PDF) 2 Page - Samsung semiconductor |
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K9E2G08B0M-VCB0 Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 38 page FLASH MEMORY 2 K9E2G08B0M Advanced FEATURES • Voltage Supply : 2.5V ~ 2.9V • Organization - Memory Cell Array : (256M + 8,192K)bits x 8bits - Data Register : (512 + 16)bits x 8bits • Automatic Program and Erase - Page Program : (512 + 16)bits x 8bits - Block Erase : (16K + 512)Bytes • Page Read Operation - Page Size : (512 + 16)Bytes - Random Access : 15 µs(Max.) - Serial Page Access : 50ns(Min.) • Fast Write Cycle Time - Program time : 200 µs(Typ.) - Block Erase Time : 2ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions 256M x 8 Bits NAND Flash Memory • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years • Command Register Operation • Intelligent Copy-Back • Unique ID for Copyright Protection • Package - K9E2G08B0M-YCB0/YIB0 48 - Pin TSOP I (12 X 20 / 0.5 mm pitch) - K9E2G08B0M-VCB0/VIB0 48 - Pin WSOP I (12 X 17 X 0.7mm) - K9E2G08B0M-PCB0/PIB0 48 - Pin TSOP I (12 X 20 / 0.5 mm pitch)- Pb-free Package - K9E2G08B0M-FCB0/FIB0 48 - Pin WSOP I (12 X 17 X 0.7mm)- Pb-free Package Offered in 256Mx8bits, the K9E2G08B0M is 2Gbit with spare 64Mbit capacity. The device is offered in 2.7 Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200 µs on the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and mar- gining of data. Even the write-intensive systems can take advantage of the K9E2G08B0M ′s extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9E2G08B0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. PRODUCT LIST Part Number Vcc Range Organization PKG Type K9E2G08B0M-Y,P 2.5V ~ 2.9V X8 TSOP1 K9E2G08B0M-V,F WSOP1 GENERAL DISCRIPTION |
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Similar Description - K9E2G08B0M-VCB0 |
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