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K4E661611D Datasheet(PDF) 6 Page - Samsung semiconductor

Part # K4E661611D
Description  4M x 16bit CMOS Dynamic RAM with Extended Data Out
Download  36 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4E661611D Datasheet(HTML) 6 Page - Samsung semiconductor

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CMOS DRAM
K4E661611D, K4E641611D
AC CHARACTERISTICS (Continued)
Parameter
Symbol
-50
-60
Units
Note
Min
Max
Min
Max
Data hold time
tDH
8
10
ns
9,19
Refresh period (4K, Normal)
tREF
64
64
ms
Refresh period (8K, Normal)
tREF
64
64
ms
Write command set-up time
tWCS
0
0
ns
7
CAS to W delay time
tCWD
30
32
ns
7,15
RAS to W delay time
tRWD
67
77
ns
7
Column address W delay time
tAWD
42
47
ns
7
CAS set-up time (CAS -before-RAS refresh)
tCSR
5
5
ns
17
CAS hold time (CAS -before-RAS refresh)
tCHR
10
10
ns
18
RAS to CAS precharge time
tRPC
5
5
ns
Access time from CAS precharge
tCPA
28
35
ns
3
Hyper Page cycle time
tHPC
20
25
ns
20
Hyper Page read-modify-write cycle time
tHPRWC
47
56
ns
20
CAS precharge time (Hyper page cycle)
tCP
8
10
ns
14
RAS pulse width (Hyper page cycle)
tRASP
50
200K
60
200K
ns
RAS hold time from CAS precharge
tRHCP
30
35
ns
OE access time
tOEA
13
15
ns
OE to data delay
tOED
13
13
ns
CAS precharge to W delay time
tCPWD
45
54
ns
Output buffer turn off delay time from OE
tOEZ
3
13
3
13
ns
6
OE command hold time
tOEH
13
15
ns
Write command set-up time (Test mode in)
tWTS
10
10
ns
11
Write command hold time (Test mode in)
tWTH
10
10
ns
11
W to RAS precharge time (C-B-R refresh)
tWRP
10
10
ns
W to RAS hold time (C-B-R refresh)
tWRH
10
10
ns
Output data hold time
tDOH
5
5
ns
Output buffer turn off delay from RAS
tREZ
3
13
3
13
ns
6,21
Output buffer turn off delay from W
tWEZ
3
13
3
13
ns
6
W to data delay
tWED
15
15
ns
OE to CAS hold time
tOCH
5
5
ns
CAS hold time to OE
tCHO
5
5
ns
OE precharge time
tOEP
5
5
ns
W pulse width (Hyper page cycle)
tWPE
5
5
ns
RAS pulse width (C-B-R self refresh)
tRASS
100
100
us
22,23,24
RAS precharge time (C-B-R self refresh)
tRPS
90
110
ns
22,23,24
CAS hold time (C-B-R self refresh)
tCHS
-50
-50
ns
22,23,24


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