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SPA12N50C3 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # SPA12N50C3
Description  Isc N-Channel MOSFET Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

SPA12N50C3 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
2
Isc N-Channel MOSFET Transistor
SPA12N50C3
·
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage
VGS=0V; ID=0.25mA
500
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID=500uA
2.1
3
3.9
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=7A
0.34
0.92
0.38
Ω
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
±
100
nA
IDSS
Drain-Source Leakage Current
VDS= 500V; VGS= 0V;Tj=25℃
VDS=500V; VGS= 0V; Tj=150℃
0.1
1
100
μ
A
VSDF
Diode forward voltage
ISD=11.6A, VGS = 0 V
1
1.2
V
NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.


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