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M5M5V216ATP Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. M5M5V216ATP
Description  2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M5M5V216ATP Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI ELECTRIC
M5M5V216ATP,RT
revision-01, ' 98.12.08
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
PIN CONFIGURATION
DESCRIPTION
Single +2.7~+3.6V power supply
Small stand-by current: 0.3µA(3V,typ.)
No clocks, No refresh
Data retention supply voltage=2.0V to 3.6V
All inputs and outputs are TTL compatible.
Easy memory expansion by S , BC1 and BC2
Common Data I/O
Three-state outputs: OR-tie capability
OE prevents data contention in the I/O bus
Process technology: 0.25µm CMOS
Package: 44 pin 400mil TSOP (II)
FEATURES
1
The M5M5V216A is a family of low voltage 2-Mbit static RAMs
organized as 131,072-words by 16-bit, fabricated by
Mitsubishi's
high-performance 0.25µm CMOS technology.
The M5M5V216A is suitable for memory applications where a
simple interfacing , battery operating and battery backup are the
important design objectives.
M5M5V216ATP, RT are packaged in a 44-pin 400mil thin small
outline package. M5M5V216ATP (normal lead bend type package)
, M5M5V216ART (reverse lead bend type package) , both types
are very easy to design a printed circuit board.
From the point of operating temperature, the family is divided into
three versions; "Standard", "W-version", and "I-version". Those are
summarized in the part name table below.
PART NAME TABLE
Standard
0 ~ +70 C
W-version
-20 ~ +85 C
I-version
-40 ~ +85 C
Version,
Part name
Power
Supply
Access
time
max.
25 C
Stand-by current Icc(PD), Vcc=3.0V
55ns(@ 2.7V) / 50ns(@3.3V)
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
---
---
---
0.3µA
0.3µA
0.3µA
---
1µA
1µA
3µA
1µA
3µA
typical *
---
---
---
40 C
1µA
1µA
1µA
---
---
20µA
8µA
20µA
8µA
50µA
24µA
20µA
8µA
50µA
24µA
70 C
85 C
25 C
40 C
---
---
---
---
---
3µA
Active
current
45mA
(10MHz)
5mA
(1MHz)
Ratings (max.)
Operating
temperature
(3.0V, typ.)
Icc1
* "typical" parameter is sampled, not 100% tested.
Outline: TP :
44P3W - H
RT : 44P3W - J
NC: No Connection
A0 ~ A16
DQ1 ~ DQ16
S
W
OE
BC1
Address input
Data input / output
Chip select input
Write control input
Output inable input
Lower Byte (DQ1 ~ 8)
Pin
Function
Vcc
GND
Power supply
Ground supply
BC2
Upper Byte (DQ9 ~ 16)
BC1
OE
A4
A3
BC2
S
A5
DQ1
NC
Vcc
GND
WE
NC
A8
A9
A10
A11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A2
A1
A0
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
A16
A15
A14
A13
A12
DQ9
DQ10
DQ11
DQ12
Vcc
GND
DQ13
DQ14
DQ15
DQ16
A6
A7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
A3
S
DQ1
Vcc
GND
WE
A2
A1
A0
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
A16
A15
A14
A13
A12
BC1
OE
BC2
A5
NC
NC
A8
A9
A10
A11
DQ9
DQ10
DQ11
DQ12
Vcc
GND
DQ13
DQ14
DQ15
DQ16
A6
A7
M5M5V216ATP , RT -70L
70ns(@ 2.7V) / 65ns(@3.3V)
M5M5V216ATP , RT -55H
55ns(@ 2.7V) / 50ns(@3.3V)
M5M5V216ATP , RT -70H
70ns(@ 2.7V) / 65ns(@3.3V)
M5M5V216ATP , RT -55LW
55ns(@ 2.7V) / 50ns(@3.3V)
M5M5V216ATP , RT -70LW
70ns(@ 2.7V) / 65ns(@3.3V)
M5M5V216ATP , RT -55HW
55ns(@ 2.7V) / 50ns(@3.3V)
M5M5V216ATP , RT -70HW
70ns(@ 2.7V) / 65ns(@3.3V)
M5M5V216ATP , RT -55L I
55ns(@ 2.7V) / 50ns(@3.3V)
M5M5V216ATP , RT -70L I
70ns(@ 2.7V) / 65ns(@3.3V)
M5M5V216ATP , RT -55H I
55ns(@ 2.7V) / 50ns(@3.3V)
M5M5V216ATP , RT -70H I
70ns(@ 2.7V) / 65ns(@3.3V)
M5M5V216ATP , RT -55L


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