S29C51004T12J datasheet(3/16 Pages) ETC1

Part #	S29C51004T12J

Description	4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY

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S29C51004T/S29C51004B V1.0 May 2002

Functional Block Diagram

Capacitance (1,2)

NOTE:

1.

Capacitance is sampled and not 100% tested.

2.

TA = 25°C, VCC = 5V ± 10%, f = 1 MHz.

Latch Up Characteristics(1)

NOTE:

1.

Includes all pins except VCC. Test conditions: VCC = 5V, one pin at a time.

AC Test Load

Symbol

Parameter

Test Setup

Typ.

Max.

Units

CIN

Input Capacitance

VIN = 0

6

8

pF

COUT

Output Capacitance

VOUT = 0

8

12

pF

CIN2

Control Pin Capacitance

VIN = 0

8

10

pF

Parameter

Min.

Max.

Unit

Input Voltage with Respect to GND on A9, OE

-1

+13

V

Input Voltage with Respect to GND on I/O, address or control pins

-1

VCC + 1

V

VCC Current

-100

+100

mA

Address buffer & latches

A0–A18

51004-07

I/O Buffer & Data Latches

I/O0–I/O7

Y-Decoder

4,194,304 Bit

Memory Cell Array

X-Decoder

Control Logic

CE

OE

WE

51004-08

IN3064 or Equivalent

IN3064

or Equivalent

2.7 k

Ω

6.2 k

Ω

+5.0 V

IN3064 or Equivalent

CL = 100 pF

Device Under

Test

SyncMOS Technologies Inc.

S29C51004T/S29C51004B

4 MEGABIT (524,288 x 8 BIT)

5 VOLT CMOS FLASH MEMORY

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