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ON1023 Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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ON1023 Datasheet(HTML) 2 Page - Panasonic Semiconductor |
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2 / 4 page  2 CNZ1021, CNZ1023, CNA1009H SHG00017BED ■ Absolute Maximum Ratings T a = 25°C 50 Ω R L V CC Sig. out 10% 90% Sig. in t r t f (Input pulse) (Output pulse) t r : Rise time t f : Fall time Parameter Symbol Rating Unit Input (Light Reverse CNZ1021 VR 3V emitting diode) voltage CNZ1023 3 CNA1009H 5 Forward current IF 50 mA Power dissipation * 1 PD 75 mW Output (Photo Collector-emitter voltage VCEO 30 V transistor) (Base open) Emitter-collector voltage VECO 5V (Base open) Collector current IC 20 mA Collector power dissipation * 2 PC 100 mW Temperature Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −40 to +100 °C Parameter Symbol Conditions Min Typ Max Unit Input Forward voltage VF IF = 20 mA 1.25 1.40 V characteristics Reverse current IR VR = 3 V 10 µA Output Collector-emitter cutoff current ICEO VCE = 10 V 10 200 nA characteristics (Base open) Transfer Collector current IC VCC = 5 V, IF = 20 mA, RL = 100 Ω 0.5 15.0 mA characteristics Collector-emitter saturation voltage V CE(sat) IF = 40 mA, I C = 1 mA 0.4 V Rise time * tr VCC = 5 V, IC = 1 mA 5 µs Fall time * tf RL = 100 Ω 5 µs ■ Electrical-Optical Characteristics T a = 25°C ± 3°C Note) 1. Input and output are practiced by electricity. 2. This device is designed be disregarded radiation. 3. *: Switching time measurement circuit Note) *1: Input power derating ratio is 1.0 mW/ °C at T a ≥ 25°C. *2: Output power derating ratio is 1.33 mW/ °C at T a ≥ 25°C. |
Similar Part No. - ON1023 |
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Similar Description - ON1023 |
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