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STT181
Thyristor-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
Unit
V
VT, VF
IT, IF=300A; TVJ=25
oC
1.25
VTO
For power-loss calculations only (TVJ=125
oC)
0.88
V
rT
1.15
m
VD=6V;
TVJ=25
oC
TVJ=-40
oC
VGT
2.5
2.6
V
VD=6V;
TVJ=25
oC
TVJ=-40
oC
IGT
150
200
mA
VGD
TVJ=TVJM;
VD=2/3VDRM
0.2
V
IGD
10
mA
IH
TVJ=25
oC; VD=6V; RGK=
200
mA
TVJ=25
oC; tp=30us; VD=6V
IG=0.5A; diG/dt=0.5A/us
300
mA
IL
per thyristor/diode; DC current
per module
RthJC
0.155
0.0775
K/W
per thyristor/diode; DC current
per module
RthJK
0.225
0.1125
K/W
dS
Creeping distance on surface
12.7
mm
dA
Strike distance through air
9.6
mm
a
Maximum allowable acceleration
50
m/s
2
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM
10
mA
TVJ=25
oC; VD=1/2VDRM
IG=0.5A; diG/dt=0.5A/us
tgd
2
us
TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us
typ.
VR=100V; dv/dt=20V/us; VD=2/3VDRM
tq
150
us
uC
QS
TVJ=TVJM; IT, IF=300A; -di/dt=50A/us
550
IRM
235
A
FEATURES
* International standard package
* Planar passivated chips
* Isolation voltage 3600 V~
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
* Copper base plate