MTD6N15 datasheet(3/8 Pages) ONSEMI

Part #	MTD6N15

Description	Power Field Effect Transistor DPAK for Surface Mount

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Manufacturer	ONSEMI [ON Semiconductor]

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MTD6N15

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TYPICAL ELECTRICAL CHARACTERISTICS

2

1.6

1.2

0.8

0.4

0

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. On−Region Characteristics

TJ = 25°C

24

20

16

12

8

4

0

60

50

40

30

20

10

0

10 V

9 V

8 V

7 V

6 V

5 V

VDS = VGS

ID = 1 mA

− 50

0

50

100

150

TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Gate−Threshold Voltage Variation

With Temperature

3.6

3.2

2.8

2.4

2

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 4. Transfer Characteristics

VDS = 10 V

TJ = 25°C

−55

°C

100

°C

14

12

10

8

6

4

2

0

468

10

2

1.6

1.2

0.8

0.4

0

− 50

0

50

100

150

200

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Breakdown Voltage Variation

With Temperature

VGS = 0 V

ID = 0.25 mA

ID, DRAIN CURRENT (AMPS)

Figure 6. On−Resistance versus Drain Current

VGS = 10 V

0.30

0.25

0.20

0.15

0.10

0.05

0

20

16

12

8

4

0

TJ = 100°C

25

°C

−55

°C

TJ, JUNCTION TEMPERATURE (°C)

Figure 7. On−Resistance Variation

With Temperature

VGS = 10 V

ID = 3 A

− 50

0

50

100

150

200

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