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IRF7321D2PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF7321D2PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7321D2PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA ––– 0.042 0.062 VGS = -10V, ID = -4.9A ––– 0.076 0.098 VGS = -4.5V, ID = -3.6A VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA gfs Forward Transconductance ––– 7.7 ––– S VDS = -15V, ID = -4.9A ––– ––– -1.0 VDS = -24V, VGS = 0V ––– ––– -25 VDS = -24V, VGS = 0V, TJ = 55°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = 20V Qg Total Gate Charge ––– 23 34 ID = -4.9A Qgs Gate-to-Source Charge ––– 3.8 5.7 nC VDS = -15V Qgd Gate-to-Drain ("Miller") Charge ––– 5.9 8.9 VGS = -10V, See Fig. 6 td(on) Turn-On Delay Time ––– 13 19 VDD = -15V tr Rise Time ––– 13 20 ID = -1.0A td(off) Turn-Off Delay Time ––– 34 51 RG = 6.0Ω tf Fall Time ––– 32 48 RD = 15Ω, Ciss Input Capacitance ––– 710 ––– VGS = 0V Coss Output Capacitance ––– 380 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 180 ––– ƒ = 1.0MHz, See Fig. 5 MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current IGSS Ω µA nA ns Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current(Body Diode) ––– ––– -2.5 ISM Pulsed Source Current (Body Diode) ––– ––– -30 VSD Body Diode Forward Voltage ––– -0.78 -1.0 V TJ = 25°C, IS = -1.7A, VGS = 0V trr Reverse Recovery Time (Body Diode) ––– 44 66 ns TJ = 25°C, IF = -1.7A Qrr Reverse Recovery Charge ––– 42 63 nC di/dt = 100A/µs A MOSFET Source-Drain Ratings and Characteristics Parameter Max. Units Conditions If (av) Max. Average Forward Current 3.2 50% Duty Cycle. Rectangular Wave, Tc = 25°C 2.0 See Fig.14 Tc = 70°C ISM Max. peak one cycle Non-repetitive 200 5µs sine or 3µs Rect. pulse Following any rated Surge current 20 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied A Schottky Diode Maximum Ratings A Parameter Max. Units Conditions Vfm Max. Forward voltage drop 0.57 If = 3.0, Tj = 25°C 0.77 If = 6.0, Tj = 25°C 0.52 If = 3.0, Tj = 125°C 0.79 If = 6.0, Tj = 125°C . Irm Max. Reverse Leakage current 0.30 Vr = 30V Tj = 25°C 37 Tj = 125°C Ct Max. Junction Capacitance 310 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C dv/dt Max. Voltage Rate of Charge 4900 V/µs Rated Vr Schottky Diode Electrical Specifications V mA ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) |
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