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K6T1008C2C Datasheet(PDF) 4 Page - Samsung semiconductor

Part No. K6T1008C2C
Description  128K x8 bit Low Power CMOS Static RAM
Download  10 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6T1008C2C Datasheet(HTML) 4 Page - Samsung semiconductor

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PRELIMINARY
K6T1008C2C Family
CMOS SRAM
Revision 2.0
November 1997
4
RECOMMENDED DC OPERATING CONDITIONS1)
Note
1. Commercial Product : TA=0 to 70
°C and Industrial Product :TA=-40 to 85°C, otherwise specified.
2. Overshoot : Vcc+3.0V for
≤30ns pulse width.
3. Undershoot : -3.0V for
≤30ns pulse width.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
4.5
5.0
5.5
V
Ground
Vss
0
0
0
V
Input high voltage
VIH
2.2
-
Vcc+0.52)
V
Input low voltage
VIL
-0.53)
-
0.8
V
CAPACITANCE1) (f=1MHz, TA=25
°C)
1. Capacitance is sampled not, 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
6
pF
Input/Output capacitance
CIO
VIO=0V
-
8
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
VIN=Vss to Vcc
-1
-
1
µA
Output leakage current
ILO
CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc
-1
-
1
µA
Operating power supply current
ICC
IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL, Read
-
5
10
mA
Average operating current
ICC1
Cycle time=1
µs, 100% duty, IIO=0mA, CS1≤0.2V,
CS2
≥VCC-0.2V, VIN≤0.2V or VIN≥VCC-0.2V
Read
-
2
5
mA
Write
20
35
ICC2
Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH,VIN=VIL or VIH
-
45
60
mA
Output low voltage
VOL
IOL=2.1mA
-
-
0.4
V
Output high voltage
VOH
IOH=-1.0mA
2.4
-
-
V
Standby Current(TTL)
ISB
CS1=VIH, CS2=VIL, Other input=VIL or VIH
-
-
3
mA
Standby
Current
(CMOS)
K6T1008C2C-L
ISB1
CS1
≥Vcc-0.2V, CS2≥Vcc-0.2V
or CS2
≤0.2V
Other input =0~Vcc
Low Power
-
1
50
µA
K6T1008C2C-B
Low Low Power
-
0.3
10
K6T1008C2C-P
Low power
-
1
50
K6T1008C2C-F
Low Low Power
-
0.3
15


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