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IXFN180N06 Datasheet(PDF) 1 Page - IXYS Corporation

Part No. IXFN180N06
Description  HiPerFET Power MOSFETs
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFN180N06 Datasheet(HTML) 1 Page - IXYS Corporation

  IXFN180N06 Datasheet HTML 1Page - IXYS Corporation IXFN180N06 Datasheet HTML 2Page - IXYS Corporation IXFN180N06 Datasheet HTML 3Page - IXYS Corporation IXFN180N06 Datasheet HTML 4Page - IXYS Corporation  
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© 2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J = 25°C to 150°C
N07
70
V
N06
60
V
V
DGR
T
J = 25°C to 150°C; RGS = 1 MW
N07
70
V
N06
60
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C= 25°C; Chip capability
200N06/200N07
200
A
180N07
180
A
I
L(RMS)
Terminal current limit
100
A
I
DM
T
C
= 25
°C, pulse width limited by T
JM
600
A
I
AR
T
C
= 25
°C
100
A
E
AR
T
C
= 25
°C30
mJ
E
AS
T
C
= 25
°C
2
J
dv/dt
I
S
£ I
DM, di/dt £ 100 A/ms, VDD £ VDSS,
5
V/ns
T
J
£ 150°C, R
G = 2 W
P
D
T
C
= 25
°C
520
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL £ 1 mA
t = 1 s
3000
V~
M
d
Mounting torque
1.5/13Nm/lb.in.
Terminal connection torque
1.5/13Nm/lb.in.
Weight
30
g
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D = 1 mA
N06
60
V
N07
70
V
V
GS (th)
V
DS = VGS, ID = 8 mA
2
4
V
I
GSS
V
GS = ±20 VDC, VDS = 0
±200
nA
I
DSS
V
DS = 0.8 • VDSS
T
J
= 25
°C
400
mA
V
GS = 0 V
T
J = 125°C2
mA
R
DS(on)
V
GS = 10 V, ID = 0.5 • ID25
200N06/200N07
6 m
W
Pulse test, t
£ 300 ms, duty cycle d £ 2 %
180N07
7 m
W
G = Gate
D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• miniBLOC with Aluminium nitride
isolation
• Low R
DS (on) HDMOS
TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
97533A (9/99)
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
V
DSS
I
D25
R
DS(on)
IXFN 200 N06
60 V
200 A
6 m
W
IXFN 180 N07
70 V
180 A
7 m
W
IXFN 200 N07
70 V
200 A
6 m
W
t
rr £ 250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.


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