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IS42S81600A-10T Datasheet(PDF) 2 Page - Integrated Circuit Solution Inc |
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IS42S81600A-10T Datasheet(HTML) 2 Page - Integrated Circuit Solution Inc |
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2 / 66 page  ISSI® 2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ADVANCEDINFORMATION Rev. 00A 06/01/02 IS42S81600A, IS42S16800A, IS42S32400A IS42LS81600A, IS42LS16800A, IS42LS32400A DEVICE OVERVIEW The 128Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 2.5V VDD and 1.8V VDDQ or 3.3VDD and 3.3V VDDQ memory systems containing 134,217 ,728 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256 columns by 16 bits. The 128Mb SDRAM includes an AUTO REFRESH MODE, and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible. Only partials of the memory array can be selected for Self- Refresh and the refresh period during Self-Refresh is progammable in 4 steps which drastically reduces the self refresh current, depending on the case temperature of the components in the system application. The 128Mb SDRAM has the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time and the capability to randomly change column addresses on each clock cycle during burst access. A self-timed row precharge initiated at the end of the burst sequence is available with the AUTO PRECHARGE func- tion enabled. Precharge one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, random-access operation. SDRAM read and write accesses are burst oriented starting at a selected location and continuing for a programmed num- ber of locations in a programmed sequence. The registra- tion of an ACTIVE command begins accesses, followed by a READ or WRITE command. The ACTIVE command in conjunction with address bits registered are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-A11 select the row). The READ or WRITE commands in conjunction with address bits registered are used to select the starting column location for the burst access. Programmable READ or WRITE burst lengths consist of 1, 2, 4 and 8 locations or full page, with a burst terminate option. CLK CKE CS RAS CAS WE A11 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 BA0 BA1 A10 COMMAND DECODER & CLOCK GENERATOR MODE REGISTER REFRESH CONTROLLER REFRESH COUNTER SELF REFRESH CONTROLLER ROW ADDRESS LATCH COLUMN ADDRESS LATCH BURST COUNTER COLUMN ADDRESS BUFFER COLUMN DECODER DATA IN BUFFER DATA OUT BUFFER DQM I/O 0-15 Vcc/VccQ GND/GNDQ 11 11 8 11 11 8 16 16 16 16 256K (x 16) 4096 4096 4096 4096 MEMORY CELL ARRAY BANK 0 SENSE AMP I/O GATE BANK CONTROL LOGIC ROW ADDRESS BUFFER FUNCTIONAL BLOCK DIAGRAM |
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