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P0903BI Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part No. P0903BI
Description  N-Channel Logic Level Enhancement Mode Field Effect Transistor
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Maker  ETC1 [List of Unclassifed Manufacturers]
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P0903BI Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

   
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Mar-07-2005
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BI
TO-251
Lead-Free
NIKO-SEM
On-State Drain Current
1
ID(ON)
VDS = 10V, VGS = 10V
50
A
VGS = 4.5V, ID = 20A
11
16
Drain-Source On-State Resistance
1
RDS(ON)
VGS = 10V, ID = 25A
7.5
9.5
Forward Transconductance
1
gfs
VDS = 10V, ID = 25A
32
S
DYNAMIC
Input Capacitance
Ciss
1200
1800
Output Capacitance
Coss
600
1000
Reverse Transfer Capacitance
Crss
VGS = 0V, VDS = 15V, f = 1MHz
350
500
pF
Total Gate Charge
2
Qg
25
50
Gate-Source Charge
2
Qgs
15
Gate-Drain Charge
2
Qgd
VDS = 10V, VGS = 10V,
ID = 25A
10
nC
Turn-On Delay Time
2
td(on)
6
16
Rise Time
2
tr
VDS = 15V, RL = 1Ω
120
250
Turn-Off Delay Time
2
td(off)
ID
≅ 50A, V
GS = 10V, RGEN = 24Ω
40
90
Fall Time
2
tf
105
200
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
50
Pulsed Current
3
ISM
150
A
Forward Voltage
1
VSD
IS = 25A, VGS = 0V
0.9
1.3
V
Reverse Recovery Time
trr
70
nS
Peak Reverse Recovery Current
IRM(REC)
IF = IS, dlF/dt = 100A /
µS
200
A
Reverse Recovery Charge
Qrr
0.043
µC
1Pulse test : Pulse Width
≤ 300 µsec, Duty Cycle ≤ 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P0903BI”, DATE CODE or LOT #


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