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K6T8016C3M-TB55 Datasheet(PDF) 1 Page - Samsung semiconductor |
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K6T8016C3M-TB55 Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 9 page K6T8016C3M Family Revision 1.01 April 2000 1 CMOS SRAM Document Title 512Kx16 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 1.0 1.01 Remark Advance Final Final History Initial draft Finalize - Adopt New Code system. - Improve VIN, VOUT max. on ’ABSOLUTE MAXIMUM RATINGS’from 7.0V to VCC+0.5V. Errata correction Draft Date June 18, 1999 February 29, 2000 April 17, 2000 The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices. |
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