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NE663M04 Datasheet(PDF) 4 Page - California Eastern Labs

Part # NE663M04
Description  NPN SILICON HIGH FREQUENCY TRANSISTOR
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Manufacturer  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

NE663M04 Datasheet(HTML) 4 Page - California Eastern Labs

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TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE663M04
Frequency, f (GHz)
MAXIMUM STABLE GAIN, INSERTION POWER GAIN,
MAXIMUM AVAILABLE GAIN vs. FREQUENCY
VCE = 2 V
IC = 50 mA
40
35
20
25
30
5
10
15
0
0.1
1.0
10.0
MAG
MSG
|S21e|
2
VCE = 2 V
f = 1 GHz
25
20
15
10
5
0
-5
150
25
50
75
125
100
0
-15
0
-5
-10
5
10
15
Pout
IC
OUTPUT POWER COLLECTOR
CURRENT vs. INPUT POWER
Input Power Pin (dBm)
Collector Current, lC (mA)
MAXIMUM STABLE GAIN, INSERTION POWER GAIN,
MAXIMUM AVAILABLE GAIN vs. COLLECTOR CURRENT
MAG
30
25
20
15
10
5
0
1
10
100
MAG/MSG (dB) = 2.0 GHz
S21 (dB) = 2.0 GHz
VCE = 2V
f = 2 GHz
Collector Current, IC (mA)
MAXIMUM STABLE GAIN, INSERTION POWER GAIN,
MAXIMUM AVAILABLE GAIN vs. COLLECTOR CURRENT
VCE = 2 V
f = 1 GHz
30
15
20
25
10
5
0
110
100
MAG
MSG
|S21e|
2
VCE = 2 V
f = 2 GHz
25
20
15
10
5
0
-5
150
25
50
75
125
100
0
-15
0
-5
-10
5
10
15
Pout
IC
OUTPUT POWER COLLECTOR
CURRENT vs. INPUT POWER
Input Power Pin (dBm)


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