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STP5NK90Z Datasheet(PDF) 3 Page - STMicroelectronics |
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STP5NK90Z Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 12 page  3/12 STP5NK90Z - STF5NK90Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On /Off Table 8: Dynamic Table 9: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 900 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125°C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ± 10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100 µA 3 3.75 4.5 V RDS(on Static Drain-source On Resistance VGS = 10 V, ID = 2.25 A 2 2.5 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15 V , ID = 2.25 A 4.8 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1160 105 21.5 pF pF pF COSS eq (3). Equivalent Output Capacitance VGS = 0 V, VDS = 0 to 720 V 65.5 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time VDD = 450 V, ID = 2.2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) 27 7.2 52 19 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 720 V, ID = 4.4 A, VGS = 10 V (see Figure 22) 41.5 6.9 21.9 58 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 4.5 18 A A VSD (1) Forward On Voltage ISD = 4.5 A, VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4.5 A, di/dt = 100 A/µs VDD = 35V (see Figure 20) 518 3.2 12.2 ns µC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4.5 A, di/dt = 100 A/µs VDD = 35V, Tj = 150°C (see Figure 20) 712 4.66 13.1 ns µC A |
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