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MT4S34U Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. MT4S34U
Description  SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APLICATIONS.
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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MT4S34U Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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TOSHIBA
MT4S34U
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
MT4S34U
VHF-UHF BAND LOW NOISE AMPLIFIER APLICATIONS.
- Low Noise : Figure : NF=1.2dB(at f=2GHz)
- High Gain : |S21e|2=14dB(at f=2GHz)
MAXIMUM RATINGS (Ta=25deg.)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
6
V
Collector-Emitter Voltage
VCEO
3
V
Emitter-Base Voltage
VEBO
1.5
V
Collector-Current
IC
36
mA
Base Current
IB
12
mA
Collector Power Dissipation
PC
100
mW
Junction Temperature
Tj
125
deg
Storage Temperature Range
Tstg
-55-125
deg.
MARKING
MICROWAVE CHARACTERISTICS(Ta=25deg.)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Transition Frequency
fT
VCE=2V,IC=20mA
15
19
-
GHz
Insertion Gain
|S
21e2
VCE=2V,IC=20mA,f=2GHz
12
14
17
dB
Noise Figure
NF
VCE=2V,IC=5mA,f=2GHz
-
1.2
TBD
dB
ELECTRICAL CHARACTERISTICS(Ta=25deg.)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO VCB=6V,IE=0
-
-
1
uA
Emitter Cut-off Current
IEBO VEB=1V,IC=0
-
-
1
uA
DC Current Gain
hFE
VCE=2V,IC=20mA
TBD
TBD
TBD
-
Output Capacitance
Cob
-
0.4
-
pF
Reverse Transistor Capacitance
Cre
VCB=2V,IE=0,f=1MHz (Note)
-
0.2
-
pF
NOTE : Cre is measured by 3 terminal method with capacitance bridge
CAUTION
This device is sensitive to electrostatic discharge. Please make each tool and equipment earthed when you handle.
1.BASE
2.EMITTER
3.COLLECTOR
4.EMITTER
JEDEC
-
EIAJ
-
TOSHIBA
2.1±0.1
1.25±0.1
1
4
2
3
2
1
3
4
Tentative


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