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CM1000HA-24H Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. CM1000HA-24H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM1000HA-24H Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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Sep.1998
D
E
E
C
E
G
H
K
R
A
B
B
A
N
F
L
M
C
J
G
P
Q
C
U - M4 THD
(2 TYP.)
S - M8 THD
(2 TYP.)
T - DIA.
(4 TYP.)
E
G
E
Dimensions
Inches
Millimeters
A
5.12
130.0
B
4.33
±0.01
110.0
±0.25
C
1.840
46.75
D
1.73+0.04/–0.02 44.0+1.0/–0.5
E
1.46+0.04/–0.02 37.0+1.0/–0.5
F
1.42
36.0
G
1.25
31.8
H
1.18
30.0
J
1.10
28.0
K
1.08
27.5
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
one IGBT in a single configuration
with a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM1000HA-24H is a 1200V
(VCES), 1000 Ampere Single IGBT
Module.
Type
Current Rating
VCES
Amperes
Volts (x 50)
CM
1000
24
Dimensions
Inches
Millimeters
L
0.79
20.0
M
0.77
19.5
N
0.75
19.0
P
0.61
15.6
Q
0.51
13.0
R
0.35
9.0
S
M8 Metric
M8
T
0.26 Dia.
Dia. 6.5
U
M4 Metric
M4
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE


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